BAV99_SER All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 8 — 18 November 2010 5 of 14
NXP Semiconductors
BAV99 series
High-speed switching diodes
(1) Tamb
= 150
°C
(2) Tamb
=85°C
(3) Tamb
=25°C
(4) Tamb
=
?40
°C
(1) Tamb
= 150
°C
(2) Tamb
=85°C
(3) Tamb
=25°C
(4) Tamb
=
?40
°C
Fig 1. Forward current as a function of forward
voltage; typical values
Fig 2. Reverse current as a function of reverse
voltage; typical values
f=1MHz; Tamb
=25°C Based on square wave currents.
Tj
=25°C; prior to surge
Fig 3. Diode capacitance as a function of reverse
voltage; typical values
Fig 4. Non-repetitive peak forward current as a
function of pulse duration; maximum values
006aab132
1
10
102
103
IF
(mA)
10?1
VF
(V)
0 1.40.2 1.20.4 0.80.6
1.0
(1)
(2)
(3)
(4)
006aab133
102
IR
(μA)
10
VR
(V)
0 10020
40 60
80
1
10?1
10?2
10?3
10?4
10?5
(1)
(2)
(3)
(4)
0
10?1
08164
12
VR
(V)
11010 102
103
4
0.8
0.6
0.4
0.2
mbg446
Cd
(pF)
mbg704
10
1
102
IFSM
(A)
tp
(
μs)
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